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9xxnm 13W Single Emitter LD Chip
9xxnm 13W Single Emitter LD Chip
Center wavelength
915nm/976nm
Output power
13W
Operating current
12.5A
Operating voltage
1.5V
Emitting dimensions
96μm
Chip sizes
4000*500*150 μm
Divergence
8/28 degrees
Total conversion efficiency
68%
Center wavelength
915nm/976nm
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Product Description

 Shenzhen Raybow Optoelectronics Co., Ltd. , a manufacturer of high-power semiconductor laser chips, announced the launch of a new 13W 9XXnm semiconductor laser chip, which is mainly used in fiber laser pumping, medical beauty, scientific research and other fields.


    The new 13W 9XXnm semiconductor laser chip model is RB-9XXA-96-13-4-SE, the luminescence strip width is 96μm, the cavity length is 4mm, the photoelectric conversion efficiency is 68%, the DOP is >96%, the service life can reach more than 30,000 hours. In addition, the chip also uses new epitaxial structure design and material epitaxy, leading cavity surface passivation technology, advanced non-pump window design and preparation technology and dry and wet corrosion combined with self-alignment technology, control the consistency of strip width, especially to ensure high yield under mass production, reduce the cost of laser chip.


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